january 2002 200 2 fairchild semiconductor corporation fds7760a rev d (w) fds7760 a n - channel logic level powertrench ? mosfet general description this n - channel logic level mosfet is produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize on - state resistance and yet m aintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in - line power loss and fast switching are required. applications dc/dc converter load switch motor drives features 15 a, 30 v . r ds(on) = 5.5 m w @ v gs = 10 v r ds(on) = 8 m w @ v gs = 4.5 v. low gate charge ( 37nc typical) fast switching speed. high performance trench technology for extremely low r ds(on) . high power and current handling capability. s d s s so-8 d d d g 4 3 2 1 5 6 7 8 absolute max imum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain - source voltage 30 v v gss gate - source voltage 20 v i d drain current ? continuous (note 1a) 15 a ? pulsed 60 power dissipation for single operation (n ote 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1 w t j , t stg operating and storage junction temperature range - 55 to +150 c thermal characteristics r q ja thermal resistance, junction - to - ambient (note 1a) 50 c/w r q ja thermal resistance, junction - to - ambien t (note 1c) 50 (10 sec) c/w r q jc thermal resistance, junction - to - case (note 1) 30 c/w package outlines and ordering information device marking device reel size tape width quantity fds7760a fds7760a 13?? 12mm 2500 units fds7760 a
fds7760a rev d (w) dmos electrical characteri stics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain - source avalanche ratings (note 2) w dss single pulse drain - source avalanche energy v dd = 15 v, i d = 15 a 360 mj i ar maximum drain - source avalanche current 15 a off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = 250 m a 30 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 24 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 m a i gssf gate ? body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate ? body leakag e, reverse v gs = ? 20 v v ds = 0 v ? 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 m a 1 1.6 3 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c - 5 mv/ c r ds(on) static drain ? source on ? resistance v gs = 10 v, i d = 15 a v gs = 10 v, i d = 15 a, t j = 125 c v gs = 4.5 v, i d = 13 a 4.5 7 6 5.5 8 8 m w i d(on) on ? state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 10 v, i d = 15 a 6 5 s dynamic characteristics c iss input capacitance 3514 pf c oss output capacitance 1123 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 307 pf switching characteristics (note 2) t d(on) turn ? on delay time 13 20 ns t r turn ? on rise time 12 19 ns t d(off) turn ? off delay time 78 125 ns t f turn ? off fall time v dd = 15 v , i d = 1 a, v gs = 10 v, r gen = 6 w 32 51 ns q g total gate charge 37 55 nc q gs gate ? source charge 10 nc q gd gate ? drain charge v ds = 15 v, i d = 15 a, v gs = 5 v 12 nc drain ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward current 2.1 a v sd drain ? source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.7 1.2 v notes: 1. r q ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 50/w when mounted on a 1in 2 pad of 2 oz copper b) 105/w when mounted on a .04 in 2 pad of 2 oz copper c) 125/w when mounted on a minimum pad. 2. test: pulse width < 300 m s, duty cycle < 2.0% fds7760a
fds7760a rev d (w) 0 10 20 30 40 50 60 0 0.5 1 1.5 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 5.0 2.5v 4.0v 3.5v v gs = 10v 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20 30 40 50 60 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 4.0v 6.0v 5.0v 7.0v 10v 4.5v figure 1. on - region characteristics. figure 2. on - resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 9a v gs = 10v 0 0.005 0.01 0.015 0.02 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 7.5 a t a = 125 o c t a = 25 o c figure 3. on - resistance variation with temperature. figure 4. on - resistance variation with gate - to - source voltage. 0 10 20 30 40 50 60 70 80 1 1.5 2 2.5 3 3.5 4 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. ty pical characteristics fds7760a
fds7760a rev d (w) typical characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 7.5a v ds = 5v 15v 10v 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 m s r ds(on) limit v gs = 10v single pulse r q ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q q ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) + r q ja r q ja = 125 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds7760a
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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